高性能弹用碲镉汞红外焦平面读出电路

High Performance ROIC Applied in MCT Infrared Focal Plane Array for Missiles

研制出一种高性能弹用凝视型碲镉汞(MCT)中波红外焦平面CMOS读出电路(ROIC)芯片。读出电路采用快照(Snapshot)积分模式,具有积分后读出(ITR)、积分同时读出(IWR)、长/短帧组合(COMBINED)积分和长/短帧插入(INTERLACED)积分4种模式可选功能,有效解决高灵敏度和大动态范围的矛盾;其他特征包括抗晕、多级增益可选、串口功能控制,以及全芯片电注入测试功能。该读出电路采用0.35?m DPTM标准CMOS工艺,工作电压5.0 V。测试结果体现了良好的性能:在77 K条件下,全帧频可到250 Hz(插入积分模式),功耗典型值为20 mW。

A kind of staring MCT infrared focal plane CMOS Read Out Integrated Circuit （ROIC） for Missile was developed. The ROIC supported snapshot with four integration modes： integration then readout （ITR） , integration while readout （IWR）, Long/short frame Combined integration （COMBINED） and Interlaced integration （INTERLACED）. Anti-blooming, multiple selectable gains, series port control modes and full chip current injection test functions are also included in it. The ROIC was fabricated in 0.35 μm 5.0 V DPTM standard CMOS process. The test results showed good performance of the ROIC. The frame of the ROIC is 250 Hz, and the total power dissipation is about 20 mW at 77 K.