电阻率对N型单晶硅电池电性能影响的研究

Influence of Different Resistivity on N-type Monocrystalline Silicon Solar Cell Performance

近年来，P型太阳电池商业化生产效率已趋于稳定，N型太阳电池逐渐走向产业化。基于N^NP＋型铝背结单晶硅太阳电池，研究了电阻率为1～5．5Ωcm的N型硅衬底材料经过相同工艺后电池性能的差别，可以有效的节省成本。通过选用不同电阻率的N型硅片，经过相同的工艺制备N型单晶硅太阳电池，采用QSSPC、四探针、ECV、恒光源I-V测试系统对电池的少子寿命、方块电阻、磷元素分布、电性能进行测量。实验结果表明：虽然电池的少子寿命随电阻率的升高而升高，但是在方块电阻、磷元素分布、开路电压Voc、短路电流Isc、填充因子FF、转换效率Eff等方面不同电阻率的电池并无明显差异。

Recent years, the commercial production efficiency of P-type solar cell has been stabilized, while N-type silicon gradually enters into the field for industrialization. In order to lower the cost, a detailed study of the difference in cells efficiency with resistivity of 1-5.5 Ω cm based on N-type A1- alloyed rear emitter cells is presented. In this paper, N-type monocrystalline silicon solar ceils with different resistivity using the same process were fabricated. Measurements of QSSPC （Quasi-Steady-State Photoconductance） show that the higher the resistivity, the higher the minority carrier lifetime. Measurements of the ECV and I-V features show that the sheet resistance, the distribution of Phosphorus, open circuit voltage（ Voc ）, short circuit current（ Iso ） , the fill factor（FF） , conversion efficiency （Eff） of N-type monocrystalline silicon solar ceils with different resistivity are almost the same.