石英生长坩埚镀碳工艺研究

Study on the carbon coating process in ampoule

研究了在AgGaS2晶体生长石英坩埚内壁镀碳的工艺,包含了镀碳温度、镀碳时间及冷去时间对碳膜质量的影响,从而获得了最佳镀碳工艺,即采用高纯甲烷在1040℃的高温下,热解60min,并冷却12h。采用该工艺镀碳的石英坩埚解决了AgGaS2晶体在高温下与石英坩埚的粘连问题,防止了坩埚杂质向晶体中的扩散,生长出表面光滑,完整性好,大尺寸的AgGaS2晶体。

the carbon coating process in the growth ampoule was studied. The carbon coating temperature, carbon coating time and cooling time were included. The best process parameters were that the gas-flow rate of 50ml/min, the carbon coating temperature of 1040℃, the carbon coating time of 60min and the cooling time of 12h. It was an effective measure to prevent melt conglutinate with quartz ampoule. It can improve the quality of the AgGaS2 single crystal. Largesize and high-quality AgGaS2 single crystal was obtained by using carbon coating and growth quartz ampoule.