具有低能耗的场截止型IGBT研究

Study of the Field Stop IGBT with Low Power Losses

开发出场截止型IGBT并深入研究了场截止型IGBT的核心技术和关键工艺.相比非穿通型IGBT,通过场截止层的形成,芯片厚度降至105 μm,器件导通压降低于2V,关断时间小于250 ns,电学性能得到了显著提高.IGBT应用于电磁炉,在不同功率下的管壳温升为25℃～35℃,远低于非穿通型IGBT,达到了更低的能量损耗.

This paper introduces the development of the field stop （FS） type IGBT, followed by thorough research of its key technology and process. Comparison with the non-punch through （NPT） IGBT indicates that the thickness of FS-IGBT chips decreases to 105 μm via constructing an FS layer, and higher performance of devices is realized with forward voltage drop below 2 V and turn-off time shorter than 250 ns. When the FS-IGBT is applied in induction cookers on different power, its case temperature rise varies from 25 ℃ to 35℃, which is much lower than the existing NPT-IGBT, indicating that lower heat dissipation and energy losses are achieved.