摘要
F类射频功率放大器作为开关模式放大器的一种,其理想效率为100%。传统F类功率放大器的设计方法是利用输出端谐波抑制,在晶体管的漏极得到近似方波的电压信号和近似半正弦波的电流信号,以此提高放大器效率。文章通过研究电路的结构,在F类功率放大器的输入端加入谐波抑制电路,同时利用输入和输出谐波抑制匹配网络,能够更有效提高输出功率和功率附加效率;结合宽禁带功率器件,在S波段完成一款电路的设计,在3.45~3.55GHz频带内,输入激励为28dBm条件下,测试得到最大PAE能够达到78.3%,输出功率40.5dBm,实验结果和仿真结果基本吻合。
Class-F RF power amplifiers are a type of switching amplifier offering very high efficiency approaching 100% .The traditional design methods of Class-F amplifier use the harmonic suppression at the output of the amplifier ,w here square-like drain voltage and close-to-half-sinusoidal drain cur-rent waveforms are obtained to improve the efficiency of amplifier .Through the study of circuit struc-ture ,input harmonic controllable matching network is added in novel high efficiency Class-F ampli-fier ,meanwhile ,both input and output harmonic controllable matching networks are used to obtain the best power-added efficiency .Using the wide band-gap device ,the improved Class-F power ampli-fier is designed at the S band .In 3.45-3.55 GHz ,the measurement results show that the maximum PAE of the power amplifier can achieve 78.3% with 40.5 dBm output power ,when the input power is 28 dBm .The experimental results are found to be in good agreement with the simulation results .
出处
《合肥工业大学学报（自然科学版）》
CAS
CSCD
北大核心
2014年第9期1080-1083,共4页
Journal of Hefei University of Technology：Natural Science
基金
国家自然科学基金资助项目(51207041)
合肥师范学院科研基地重点资助项目(2013jdzd02)
