摘要
提出一套新的无定型碳牺牲层蚀刻工艺,新工艺应用于MEMS和Sensor牺牲材料工艺中,能够很好地解决无定形碳蚀刻工艺中有机副产物问题。在无定形碳蚀刻工艺中添加低浓度的CF4蚀刻气体（1%~5%）,有助于去除在蚀刻过程中侧壁形成的有机副产物。在无定形碳蚀刻工艺前添加一步光刻胶硬化步骤,和在无定形碳蚀刻工艺后添加一步有机副产物各项异性蚀刻步骤,有助于去除表面产生的有机副产物。并针对新工艺去除无定形碳蚀刻过程中形成的有机副产物反应机制进行了详尽阐述与讨论。
A new amorphous carbon （A-C） dry etching process is developed and applied in the fabrication of MEMS and sensor in order to achieve more efficient release for sacrificial layer. With the new process, it can solve the polymer remaining issue during the amorphous carbon dry etching process. By adding a small amount of CF4 gas （1%-5%） , it can help to remove the polymer residue on the sidewall. An extra PR harden step will be added before the A-C main etching, and then an anisotropic polymer dry etching step will be followed to remove the surface polymer residue. The mechanism of polymer formation during the amorphous carbon dry etching process is illustrated and discussed in details in the paper.
出处
《电子与封装》
2014年第9期40-43,共4页
Electronics & Packaging
