摘要
提出了高压绝缘栅双极晶体管(IGBT)的设计方法,根据国内现有工艺水平,设计了1 700 V/100 A高压大电流的NPT-IGBT,包括其元胞结构、终端结构、工艺流程及版图的设计。通过分析及仿真确定元胞的结构参数;采用场限环与场板相结合的终端结构,讨论场板的设置对终端结构的影响,提出了多晶硅场板设置的方案;流片完成后进行半桥模块的封装,并对模块进行了测试。击穿电压达1 700 V以上,栅发射极漏电流小于80 nA、关断时间小于800 ns、关断功耗小于30 mJ,均达到设计要求。导通饱和压降3.5 V(略高),可通过增大芯片尺寸的方法加以改进。
A design method of high voltage IGBT was proposed. Based on current domestic level,the high voltage and large current NPT-IGBT with 1 700 V /100 A was designed,including cell structure,terminal structure,process and layout design. The various structure parameters of the cell were determined by analyzing and simulating. Using the terminal structure with field limiting ring combined with field plate,the influence of field plate arranging on the terminal structure was investigated,and the polysilicon field plate setting scheme was also proposed. After the chip completed,the NPT-IGBT was packed with half-bridge module and then tested. The results show that,V（ BR） CES〉 1 700 V,IGE〈80 nA,toff〈 500 ns,Eoff〈 20 mJ,which all satisfy the design target,except VCE（ sat）is higher（ 3.5 V）,and it can be enhanad by increasing the die size.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第10期747-751,共5页
Semiconductor Technology
基金
浙江省重大科技专项重点工业项目(2013C01120)
关键词
绝缘栅双极晶体管(IGBT)
元胞结构
终端结构
高压大电流
多晶硅场板
insulated gate bipolar translator（IGBT）
cell structure
terminal structure
high voltoge and current
polysilicon field plate
