硼掺杂比对p型微晶硅薄膜生长特性的影响

Effect of Boron Doping Concentration on p Typle Microcrystalline Silicon Growth Characterastic

采用射频等离子体增强化学气相沉积法制备了硼不同掺杂比系列的p型微晶硅薄膜。采用光发射谱仪对薄膜的沉积过程进行了原位表征,采用喇曼光谱和椭圆偏振光谱仪对薄膜的结构及性能进行了分析。结果表明:随着硼掺杂比的增加,SiH*,Hα和Hβ的发射峰强度都呈现出先快速减小然后达到稳定状态的特点。在硼小剂量掺杂时,硼的催化作用促进了薄膜的晶化;但是随着硼掺杂比的进一步增加,薄膜的晶化率下降。在薄膜生长过程中,薄膜的沉积速率和生长指数β均随掺杂比的增加而增加,这主要是因为硼不仅促进了薄膜生长还加速了薄膜的粗糙化。

Boron doped hydrogenated microcrystalline silicon thin films were prepared by the radiofrequency plasma-enhanced chemical vapour deposition technique at various boron doping concentration.The effects of the boron concentration on the growth process,microstructural and deposition rate of the films were investigated by the optical emission spectrum,Raman spectrum and elliptical polarization spectrograph. The results show that with increase of boron doping concentration,the emission peak intensities of SiH＊,Hαand Hβexhibit the following behaviors： first quckly decreases,and then come to a stable state. The film crystallizing was promoting in low dose boron doped for the catalysis effect of boron and the film relative crystallinity decreased when rising boron doping ratio. These indicate that during the film growth process,the deposition rate and the growth index β are increasing with the rising concentration of boron doping as the function of boron on accelerating growing and roughening of films.