摘要
测量了SiGe HBT直流增益在60Coγ辐照过程中随剂量及器件电流注入水平的变化。实验结果显示在累计辐照剂量超过5 000 Gy(Si)后,器件电流增益变化与辐照剂量存在线性反比关系,且增益损伤系数与器件电流注入水平有关;器件在受到总剂量为2.78×104Gy(Si)辐照后,器件静态基极电流Ib、集电极电流Ic、静态直流增益及最大振荡频率fmax出现不同程度退化;但器件其他电参数如截止频率fT、交流增益|H21|及结电容(CCBO)与辐照前相比未出现显著退化。利用MEDICI数值模拟分析了SiGe HBT参数退化机理。
The characteristics of the DC current gain degradation with dose and current injection level for SiGe HBT during60 Co gamma irradiation were measured. The experimental results show that the current gain value is inversely proportional to irradiation dose when the irradiation total dose exceeds5 000 Gy（ Si）. Meanwhile,the value of the current gain damage coefficient was affected by the device current injection level. The static base current Ib,the collector current Ic,the DC current gain and the maximum oscillation frequency fmaxwere degraded after irradiation total dose of 2. 78 × 104Gy（ Si）.However,other electronic parameters including the cutoff frequency fT,the AC current gain ｜ H21｜and output capacitance CCBOhad not significantly changed compared with those of pre-irradiation. The degradation mechanisms of the typical electronic parameters for the test device were numerical simulated with MEDICI and analyzed.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第10期779-783,799,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(11175139)
关键词
SIGE
HBT
γ辐射
总剂量效应
电流增益
损伤系数
SiGe HBT
Gamma irradiation
Total ionizing dose effect
current gain
damage coefficient
