多晶硅绒面结构光学特性的数值模拟

Numerical Simulation for Optical Performance of Texture Structure of Multicrystalline Silicon

基于麦克斯韦方程组和材料本构方程,利用多物理场有限元软件COMSOL Multiphysics 3.5a中的RF模块建立了多坑绒面的有限元模型,并对硅片腐蚀前后的光学特性进行了模拟。研究表明,与硅片腐蚀前相比,腐蚀后(即多坑)绒面反射率较低,功率流y分量较高,具有较好的陷光效果,当波长为800nm时,多坑绒面表面电场z分量的最大值和最小值分别为腐蚀前硅片的3.1倍和2.3倍,而表面磁场y分量两个极值分别为腐蚀前硅片的6倍和6.6倍;通过将模拟结果和实验数据比较可知,多坑模型模拟结果更接近实验值,所获模拟结果可更好地指导实际生产。

Based on Maxwell equations and material constitutive equations,the finite element model of multi hole pit was established,optical performance of multicrystalline silicon wafer before and after etching was simulated with RF MODULE of COMSOL Multiphysics version 3.5a.Optical characteristic of unetching wafer and acidic textured were compared.It is indicates that acidic textured（multi hole pit） has low reflectivity,high power flow y component,the better light trapping.When wavelengh is 800 nm,maximum value and minimum value of surface electric field z component of acidic textured are 3.1 times and 2.3 times respectively than that of unetching wafer,and two extremum value of surface magnetic field z component are 6 times and 6.6 times respectively than that of unetching wafer.Numerical simulation results of Multi hole model are closely with experimental values,which can guide the practical production.