两种微结构阵列上碳纳米管薄膜强流脉冲发射比较

Comparison on Intense Pulsed Emission of Carbon Nanotube Films Grown on the Surface of Two Micro-structure Array

为比较不同微结构对于碳纳米管冷阴极电流发射能力的增强效果,采用酞菁铁高温热解方法,以化学镀铜层为缓冲层在两种不同单元尺度的微结构阵列的硅基底上制备了CNTs薄膜,并在20 GW脉冲功率源系统中采用二极结构对其强流脉冲发射特性进行了比较研究。基底微结构阵列的单元尺度为10μm×20μm(其中微锥底边长为20μm,单元节距为30μm)和20μm×20μm。结果表明:在相同的峰值电场下,基底微结构阵列的单元尺度越小,CNTs薄膜的强流脉冲发射电流越大;且随着峰值电场的增加,单元尺度越小,CNTs薄膜的发射电流的增长速度越快。

In order to compare the enhancement effect of different micro structure on carbon nanotube cathode current emission ability. Carbon nanotube（CNTs） films were grown on the surface of two microstructure array with electroless plated Cu layer by the pyrolysis of iron phthalocyanine. Intense pulsed field emission of CNTs was measured on the 20 GW pulse power system using a diode structure. The unit scales of two micro-structure array are 10 μm × 20 μm（i. e. the micro-pyramid bottom length is 20 μm,the distance between two micro-pyramids is 10 μm） and 10 μm × 20 μm respectively. It is found that,in the same peak electric field,an unit scale of micro structure array is smaller,the peak emission current of CNTs films is bigger. With the increase of the peak electric field,as unit scale of micro-structure array is smaller,the emission current of the CNTs films increases faster.