石墨烯晶体管研究进展

Latest Advance of Researches on Graphene Transistors

针对集成电路的特征尺寸小于10nm以下所面临的短沟道效应、隧道效应和制造工艺限制困难引发的研究热点——石墨烯能否替代硅,着重从数字晶体管、射频晶体管和柔性透明晶体管3个方面概括和分析了新型石墨烯晶体管的发展现状。分析认为:石墨烯平行纳米带阵列结构和异质结结构有望打开石墨烯禁带以实现大的电流开关比,将是石墨烯数字晶体管的研究热点;通过降低接触电阻、接入电阻以及衬底、栅介质的匹配来提高截止频率和最大振荡频率将是石墨烯射频晶体管的主要发展趋势;基于聚对苯二甲酸乙二醇酯(PET)衬底和离子凝胶栅介质的柔性制造技术,最有希望在保证石墨烯高迁移率的基础之上实现全石墨烯透明柔性电路,使石墨烯晶体管得以实用,必将对集成电路行业产生巨大影响。

According to the research hotspot arised by the difficulties that when the feature sizes of integrated circuits become less than 10 nm, the silicon ICs are unlikely stable due to the short channel effect, tunneling effect and manufacturing process limits, the latest advance of researches on graphene transistors are discussed from three aspects including digital transistors, radio frequency （RF） transistors and flexible transparent transistors. Graphene nanoribbons array parallel structure and heterogeneous structure are the most promising approaches on opening the graphene band gap to achieve a high on/off current ratio and to achieve complementary logic. The main development trend of graphene RF transistors is to improve the cut-off frequency and maximum oscillating frequency by reducing the contact resistance and access resistance, and matching the interface between substrate and gate dielectric. It is realized that the flexible manufacturing technology of Polythylene terephthalate （PET） substrate and Ion Gel gate dielectric are the most promising approaches to achieve a full graphene transparent flexible circuit and to keep graphene high mobility. Graphene transistors will have a huge impact on the integrated circuit industry.