半导体碳纳米管中的高能激子

High Energy Excitons in Semiconducting Single-Walled Carbon Nanotubes

利用单激发组态相互作用(SCI)方法,对半导体性单壁碳纳米管的电子结构和光学吸收谱进行理论计算.结果表明,激发碳纳米管得到了由电子空穴对相互束缚而成的激子,除了实验上常观测到的低能激子态之外,在高能处,甚至在连续能带中还出现了激子.部分高能激子来源于类似表面态的激发.

Using single configuration interaction （SCI） method, we calculated electronic structure and optical ab-sorption of two semiconducting single-walled carbon nanotubes and analyzed their absorption spectra .Our results show that in the continuum region , there are high energy excitons .Some of the high energy exciton originated from the excitation from states that are like surface states , which could be achieved through impurities or defects in nano-tubes .