摘要
采用MOCVD方法在AlN/蓝宝石模板上生长高铝组分Al0.6Ga0.4N薄膜,并采用高分辨率XRD(HRXRD)及阴极荧光(CL)方法对其进行了表征.结果表明,AlGaN薄膜产生了相分离,其原因为厚膜中的应力弛豫及Al原子低的表面迁移率.
In this work ,Al0.6Ga0.4N films grown on AlN/sapphire templates by metalorganic chemical va-por deposition （MOCVD） system were characterized by high resolution XRD and low temperature cath-odoluminescence （CL ） methods .It’s found that there exists phase separation phenomenon in the films by XRD measurements .The optical properties obtained from CL spectra confirmed this phenomenon further . The generation of phase separation is attributed to stress relaxation in thick films and the low surface mob-ility of Al atoms .
出处
《材料研究与应用》
CAS
2014年第3期169-172,共4页
Materials Research and Application
基金
广东省战略性新兴产业LED专项(项目编号2010A081001001
2011A081301003
2012A080301003
2012A080302002)
广州市应用基础研究项目(编号2013J4100014)
