离子液体中硅锗膜共沉积过程的反应特性

Reaction Properties of SiGe Film Codeposition Process in Ionic Liquid

采用电沉积法,在[EMIm]Tf2N离子液体中选取恒电位制备SiGe膜.为考察SiGe在工作电极表面的反应特性,在[EMIm]Tf2N离子液体中测试不同扫描速率下的循环伏安(CV)曲线,并利用扫描电镜和能谱分析研究SiGe膜的表面形貌和组分.结果表明,[EMIm]Tf2N离子液体中SiGe的共沉积是受扩散控制的非可逆电极过程;在该离子液体中,SiGe共沉积的平均阴极传递系数α=0.175,扩散系数D0=6.64×10-7 m/s.

A SiGe film was electrodeposited in [EMIm]Tf2 N ionic liquid.In order to study the reaction process of SiGe on electrode surface, cyclic voltammetry curves at different scan rates were determined.The microstructure and composition of the SiGe film were characterized by scanning electron microscopy and energy dispersive spectroscopy.An irreversible process of the codeposition of SiGe was controlled by diffusion in [EMIm ]Tf2 N ionic liquid.The cathodal transfer coefficient （α=0.175）and diffusion coefficient （D0=6.64×10-7 m/s）of an electrode reaction process of SiGe codeposition were calculated based on the cyclic voltmmetric curve.