摘要
我们在光致发光(PL ) 报导实质的改进效率和 Fabry-Perot (FP ) 通过表面钝化和本地地改进的单个 GaAs nanowires 的回声，甚至在房间温度要遵守的创新 FP 山峰。为赤裸的 GaAs nanowires，强壮的 FP 回声山峰能在 4 K，然而并非在房间温度被观察。然而，在金底层上扔 nanowires 在 PL 紧张(5X ) 导致实质的改进，到 FP 的无限的改进的 3.7X 达到顶点。有限差别的时间域(FDTD ) 模拟证明金底层通过提高的吸收(11X ) 而非提高的排放(1.3X ) 主要提高 PL 系列，预言当非放射的再结合不在时的 14X 的全部的 PL 改进。尽管有 FP 山峰的增加的紧张，更低的 Q 因素由于与内在的金底层联系的损失被观察。作为在这些 nanowires 减少非放射的再结合的一个工具，在 nanowires 的表面状态能被离子的液体( 1-ethyl-3-methylimidazolium 二度( trifluoromethylsulfonyl ) imide ( EMIM TFSI ))或 AlGaAs 表面层使钝化没有金底层，在房间温度完成光致发光紧张和 FP 山峰的观察的改进直到 12X 。
We report substantial improvements in the photoluminescence （PL） efficiency and Fabry-Perot （FP） resonance of individual GaAs nanowires through surface passivation and local field enhancement, enabling FP peaks to be observed even at room temperature. For bare GaAs nanowires, strong FP resonance peaks can be observed at 4 K, but not at room temperature. However, depositing the nanowires on gold substrates leads to substantial enhancement in the PL intensity （5X） and 3.7X to infinite enhancement of FP peaks. Finite-difference time-domain （FDTD） simulations show that the gold substrate enhances the PL spectra predominately through enhanced absorption （11X） rather than enhanced emission （1.3X）, predicting a total PL enhancement of 14X in the absence of non-radiative recombination. Despite the increased intensity of the FP peaks, lower Q factors are observed due to losses associated with the underlying gold substrate. As a means of reducing the non-radiative recombination in these nanowires, the surface states in the nanowires can be passivated by either an ionic liquid （1-ethyl-3-methylimidazolium bis（trifluoromethylsulfonyl）imide （EMIM TFSI）） or an A1GaAs surface layer to achieve up to 12X enhancement of the photoluminescence intensity and observation of FP peaks at room temperature without a gold substrate.
