摘要
种在 situ 传播电子显微镜学(TEM ) 使用的 nanowires 的实时观察为理解发生在 nanowire 生长期间的动态过程正在成为一个日益重要的工具。这里我们种 InAs nanowires 的现在的观察，它组成第一在一台传播电子显微镜在 In-V 混合物的 situ 生长报导了。发生在更长的生长长度上的事件的实时观察由于被完成的多达 1 nm/s 的高生长率是可能的。直生长(主要在 111B 方向) 当处于这些条件的故意的变化引起了 nanowires 形成性变态和变化生长方向时，在一致温度和部分压力被观察。在 kinking 后面的机制详细被讨论。在 nanowire 的 situ 观察， kinking 仅仅以前为 nonpolar 钻石结构类型材料被报导了(例如 Si ) ，但是这里我们极的锌闪锌矿结构(InAs ) 的现在的结果。与电子和 X 光检查在这学习一个关上的细胞透明一 -- 罪恶窗户在生长时期之间在一台常规高分辨率传播电子显微镜，创新高分辨率成像和组合分析被使用。
Live observations of growing nanowires using in situ transmission electron microscopy （TEM） is becoming an increasingly important tool for understanding the dynamic processes occurring during nanowire growth. Here we present observations of growing InAs nanowires, which constitute the first reported in situ growth of a In-V compound in a transmission electron microscope. Real time observations of events taking place over longer growth lengths were possible due to the high growth rates of up to I nm/s that were achieved. Straight growth （mainly in 〈111〉B directions） was observed at uniform temperature and partial pressure while intentional fluctuations in these conditions caused the nanowires to form kinks and change growth direction. The mechanisms behind the kinking are discussed in detail. In situ observations of nanowire kinking has previously only been reported for nonpolar diamond structure type materials （such as Si）, but here we present results for a polar zinc blende structure （InAs）. In this study a closed cell with electron and X-ray transparent a-SiN windows was used in a conventional high resolution transmission electron microscope, enabling high resolution imaging and compositional analysis in between the growth periods.
