摘要
利用准分子激光在 p型硅薄片上淀积了多层铁电薄膜 BIT/ PZT/ BIT、PZT/ BIT和 BIT。讨论了多层铁电薄膜界面内建电压 ,其中 Au/ BIT/ PZT/ TBIT/ p- Si(10 0 )的 ΔVb 最小而 Au/ BIT/ p- Si(10 0 )的 ΔVb 最大 ,但Au/ BIT/ PZT/ TBIT/ p- Si(10 0 )的ΔVb 与 Au/ BIT/ p- Si(10 0 )的Δ Vb 相差不多。 Au/ BIT/ PZT/ TBIT/ p- Si(10 0 )的I- V特性曲线非对称的整流特性和 P- V回线的刻印失效是最小的而 Au/ BIT/ p- Si(10 0 )
Ferroelectric BIT/PZT/BIT,and PZT/BIT,and BIT multilayer ferroelectric thin films were deposited on(100)p type wafers by pulsed excimer laser the built in voltages at the interface of the multilayer ferroelectric films were discussed three structure capacitors have three different Δ V b,among the three structures,the Δ V b,of the Au/BIT/PZT/TBIT/p Si(100) is the smallest and the Δ V b of the Au/BIT/p Si(100)is the largest,the value of Au/PZT/TBIT/p Si(100) is about the same of Au/PZT/p Si(100) The asymmetric degree of rectification behavior of I V curve,and an in imprint failure of P V loop of Au/BIT/PZT/TBIT/p Si(100) were the smallest and that of the Au/BIT/p Si(100) were the largest
出处
《压电与声光》
CAS
CSCD
北大核心
2002年第4期292-294,共3页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目 (5 9972 0 10 )
武汉理工大学材料复合新技术国家重点实验室资助项目
关键词
多层铁电薄膜
内建电压
刻印失效
整流特性
半导体存储器
multilayer ferroelectric films
built in voltage
imprint failure
the asymmetric degree of rectification behavior