新型碱性阻挡层抛光液的研究(英文)

Study of the New Alkaline Barrier Slurry

为了达到Ta的高去除速率,通过实验改变碱性阻挡层抛光液中各组分的体积分数,研究各组分变化对阻挡层材料Cu和Ta抛光速率的影响。碱性阻挡层抛光液中,首先确定磨料及去离子水的比例,然后再改变盐酸胍和螯合剂等组分体积分数,得到Cu和Ta抛光速率的变化规律,便于选取此条件下阻挡层抛光液最佳配比。通过各种测试手段表征抛光液对12英寸(1英寸=2.54 cm)布线片碟形坑修正能力及铜布线表面粗糙度的影响。结果表明,Ta和Cu材料的抛光速率随各组分变化规律明显,当磨料体积分数为30%、盐酸胍体积分数为3%以及螯合剂体积分数为1%时,可以达到Ta和Cu的最大抛光速率差。优化后的新型阻挡层抛光液1 min内可以实现碟形坑的有效修正及粗糙度的明显降低。

To achieve a high removal rate of Ta, through changing the volume fractions of the components of the new alkaline barrier slurry in the experiment, the effects of various components on removal rates of the barrier layer materials of Cu and Ta were studied. Initially in the alkaline barrier slurry, by confirming the ratio of abrasive and deionized water firstly, changing the volume fractions of the components such as the guanidine hydrochloride （GH） and chelating agent and obtaining the change rules for removal rates of Cu and Ta, the optimal proportion of new barrier slurry was achieved under the condition. With the test means, the correction ability of the optimized slurry on 12 inch （1 inch = 2.54 cm） wafer dishing and effects of the optimized slurry on the copper line surface morphology were characterized, respectively. The results show that the change rule of the removal rates of Ta and Cu with the components is obvious. When the volume fractions of the abrasive, GH and chelating agent are 30%, 3% and 1%, respectively, the maximum removal rate differential of Ta and Cu is achieved. With the optimized new barrier slurry, the correction of the dishing is corrected effectively and the roughness is decreased obviously within 1 min.