摘要
In this study the effects of doping atoms （AI, Cu, and N） with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory （RRAM） are systematically investigated. The results show that forming voltages and set voltages of A1/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants： oxygen vacancy （Vo） filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.
In this study the effects of doping atoms （AI, Cu, and N） with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory （RRAM） are systematically investigated. The results show that forming voltages and set voltages of A1/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants： oxygen vacancy （Vo） filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.
基金
Project supported by the National High Technology Research and Development Program of China(Grant No.2011AA010403)
