摘要
采用气相外延技术生长金掺杂的Hg1-xCdxTe薄膜材料,通过高低温退火工艺有效控制p型Hg1-xCdxTe材料的电学参数,利用傅里叶光谱仪、金相显微镜以及拉曼光谱技术对薄膜材料进行表征。通过常规光伏器件的制作工艺,利用金掺杂材料初步研制了短波器件,器件性能较好黑体DλP*可达4.67E+11/(cmHz1/2W-1)。
Au-doped Hg1 -xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1 -xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1 -xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E＋11/（cmHz1/2W-1）.
出处
《红外与激光工程》
EI
CSCD
北大核心
2014年第9期3046-3050,共5页
Infrared and Laser Engineering
基金
国家自然科学基金(11304335)
中国科学院三期创新项目(Q-ZY-87/Q-ZY-88)
