全化学溶液法制备SrTiO＿3缓冲层

Preparation of SrTiO＿3 Buffer Layer by Chemical Solution Deposition

化学法制备SrTiO3薄膜成本低、效率高,适合用于YBa2Cu3O7-δ(YBCO)涂层导体的缓冲层。采用全化学溶液沉积法在Ni-5W金属基带上外延生长了SrTiO3(STO)缓冲层薄膜。以乙酸盐、钛酸丁酯为原料配制均匀稳定的STO种子层、LaxSr1-xTiO3种子层和STO缓冲层前驱溶液。研究了STO种子层薄膜厚度对在STO/Ni-5W(200)上沉积STO外延薄膜性能的影响,结果表明,在880℃烧结温度下制备的3层STO种子层上可以制备出表面光滑平整、具有(200)择优取向的STO缓冲层。尝试将La元素掺入STO中制得稳定的LSTO前驱液,在LSTO/Ni-5W结构上制备了具有(200)择优取向的STO缓冲层薄膜,可作为YBa2Cu3O7-δ涂层导体的缓冲层。

The SrTiO3 films prepared by chemical method possess features of low-cost and efficiency, and they are a promising buffer layer for YBCO coated conductors. STO buffer layers were prepared on Ni-5W substrate by chemical solution deposition. Acetate and tetrabutyl titanate were used as precursors to synthesize the precursor solutions of STO seed layers, LaxSr1-xTiO3 seed layers and STO buffer layers. Effect of the thickness of STO seed layers on the properties of SrTiO3 epitaxial films prepared on STO/Ni-5W（200） structures was studied. The results showed that three multilayer STO seed layers were sintered at 880℃ which was favorable to fabricate （200）-oriented STO films with smooth surface. When La was added into STO, stabilized LSTO precusor solution could be obtained, and highly （200）-oriented STO buffer films were prepared on LSTO/Ni-5W structures. They can be a promising buffer layer for YBa2Cu3O7-δ coated conductors.