铝诱导多晶硅薄膜籽晶层的电学性质

Electrical Properties of Polycrystalline Silicon Seed Layers Prepared by Aluminum-Induced Crystallization

利用磁控溅射系统在玻璃衬底上制备出具有玻璃∕铝∕非晶硅的多层膜结构样品,然后在管式退火炉中以一定的温度退火,使非晶硅晶化形成多晶硅薄膜籽晶层。扫描电子显微镜(SEM)及光学显微镜测试表明,铝诱导结晶后样品中的铝层已被完全置换为连续并且厚度均匀的多晶硅层,多晶硅晶粒的平均尺寸为23μm。喇曼光谱测试和X射线衍射(XRD)分析表明,多晶硅薄膜籽晶层具有良好的结晶质量,并且具有高度的(111)择优取向。霍尔测试结果表明,铝诱导多晶硅薄膜籽晶层属于高浓度p型掺杂,掺杂浓度达到了1018/cm3。分析认为铝在非晶硅晶化过程中不仅扮演了诱导金属的角色,还起到了掺杂的作用。

The samples with the multilayer structure of glass/aluminum/amorphous silicon were prepared on the glass substrate by the magnetron sputtering system,and then through the annealing in a tube annealing furnace,the amorphous silicon film became the polycrystalline silicon seed layer.The scanning electron microscope（SEM）and optical microscopy tests show that after the aluminum induced crystallization,the aluminum layers have been completely replaced by the continuous and thickness uniform polycrystalline silicon layers,and the average grain size of the polycrystalline silicon is 23μm.The Raman and X-ray diffraction（XRD）results indicate that the polycrystalline silicon seed layers have good crystal quality and highly（111）preferred orientation.The Hall test result shows that the aluminum-induced polycrystalline silicon seed layers are of high p-doped concentration,and the doping concentration reaches 10^18/cm^3.The analysis shows that the aluminum plays the role of the induced metal,and has the doping effect in the amorphous silicon crystallization process.