取向纳米ZnO/Cu_2O异质结阵列的制备及光电特性

Preparation and photoelectric characteristics of aligned ZnO/Cu_2O nano-heterojunction arrays

以水热合成法制备的一维取向n型ZnO纳米线阵列为衬底,采用电化学沉积法在其上沉积生长一层p型Cu2O半导体包覆层,制备出了新型ZnO/Cu2O异质结纳米线阵列光敏器件.利用XRD、SEM、TEM、XPS、PL及光响应特性等测试方法对样品的形貌、晶体结构、化学成分及光电特性进行了分析表征.研究了生长条件对ZnO/Cu2O异质结纳米线阵列各种特性的影响.研究发现,适宜的沉积电压和沉积时间是保证ZnO/Cu2O异质结光敏器件具有适宜厚度核壳包覆层及较好光响应特性的关键因素.研究结果为ZnO及Cu2O半导体材料在光敏器件中的应用提供了实验基础.

By electrodepositing a coating of p-type Cu2 O semiconductor on the aligned n-type ZnO nanowire array substrates, which were synthesized with hydrothermal synthesis method, a new type of ZnO/Cu2 O core-shell nanoheterojunction photosensitive device was fabricated under different experimental conditions. And the morphologies, microstructures, chemical composition, and optical-electrical characteristics of synthesized ZnO/Cu2 O nano-heterojunction samples were researched with SEM, XRD, TEM, XPS, PL, and light response characteristics analytic instruments, respectively. Meanwhile, the effects of experimental parameters on the optical-electrical properties of prepared ZnO/Cu2 O nano-heterojunction samples were analyzed. The choice of appropriate size of deposition voltage and time is the key impact factor to ensure the nano-heterojunction photosensitive devices have moderate core-shell coating layer thickness and better optical response characteristic. And the results are useful to the ZnO and Cu2 O semiconductor materials in the application of new photosensitive devices research fields.