InP/InGaAsP/InP多量子阱太阳电池结构的优化研究

The optimal structures of InP/InGaAsP/InP multiple quantum well solar cells

用金属纳米粒子沉积在InP/InGaAsP/InP多量子阱太阳电池表面,利用光散射来研究该电池改善后的光电性能。金属纳米粒子对量子阱太阳电池器件光电性能的作用结果是:用量子阱层与周围材料反射系数的差异来限制不同方向的入射光进入太阳电池器件侧面的传播路径。量子阱太阳电池通过这种结构优化设计,对于硅和Au纳米粒子,可以观察到短路电流密度分别增加了12.9%和7.3%,输出最大功率的转换效率分别增加了17%和1%。

The improved performance of InP/InGaAsP/InP multiple quantum well waveguide solar cells by light scattering from deposited dielectric or metal nanoparticles are reported. The integration of metal or dielectric nanoparticles above the quantum wells solar cells device is shown to couple normally incident light into lateral optical propagation paths, with optical confinement provided by the refractive index contrast between the quantum well layers and surrounding material. With optimization, short-circuit current density increases of 12.9% and 7.3% and power conversion efficiency increases of 17% and 1% are observed for silica and Au nanoparticles, respectively.