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自顶向下贯穿腐蚀制备空腔型FBAR的方法 被引量:1

Top-down Through-via Wet Etching Method to Fabricate Cavity Type FBAR
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摘要 牺牲层释放是空腔型薄膜体声波谐振器(FBAR)工艺中形成空腔结构的关键步骤,牺牲层释放的效果直接决定了空腔型FBAR的谐振特性。根据空腔型FBAR中气隙的功能和结构特点,提出了自顶向下贯穿腐蚀牺牲层制备镂空空腔型FBAR的创新工艺方法。为验证该方法的可行性,采用MATLAB对牺牲层腐蚀的恒扩散系数(CDC)模型进行数值迭代,采用Silvaco软件对其腐蚀过程进行仿真,根据仿真结果提出释放窗口的优化设计;采用ANSYS软件对镂空FBAR的谐振特性进行有限元仿真分析,对比常规FBAR发现,镂空FBAR具有较好的谐振特性,且其阻抗零点、阻抗极点频率向高频段漂移,有效机电耦合系数和品质因数降低。 The sacrifice layer release is the crucial process step to form the cavity structure of the cavity type film bulk acoustic resonator (FBAR),and the sacrifice layer release result directly determines the resonance charac teristics of the cavity type FBAR. Based on the insight of the functional and structural characteristics of the air gap in the cavity type FBAR,a novel process method named as the top-down through via wet etching to fabricate the apertured cavity type FBAR is proposed. To validate feasibility of the novel fabrication method, the constant diffusion coefficient (CDC) model numerical iteration of sacrificial layers corrosion process was simulated by MATLAB, and the corrosion process was also simulated by Silvaco software. According to the simulation results, the optimum de sign of release window is proposed. The resonance simulation of FBAR without release window and with release window have been analyzed with FEA software ANSYS. Comparing the simulation results,it shows that the aper tured FBAR still has quite good resonant characteristics, hut the frequency of impedance zero point and impedance pole of the apertured FBAR are drifted to a higher frequency band,and the effective electromechanical coupling coefficient and the quality factor of FBAR are reduced.
出处 《压电与声光》 CSCD 北大核心 2014年第5期679-684,共6页 Piezoelectrics & Acoustooptics
基金 中国工程物理研究院超精密加工技术重点实验室基金资助项目(2012CJMZZ00009) 重庆大学新型微纳器件与系统技术国防重点学科实验室访问学者基金资助项目(2013MS04) 中物院电子工程研究所科技创新基金资助项目(S20141203) 西南科技大学研究生创新基金资助项目(13YCJJ36 14YCX107 13YCX109和14YCX111)
关键词 薄膜体声波谐振器(FBAR) 空腔型 牺牲层腐蚀 释放窗口 谐振仿真 film bulk acoustic resonator(FBAR) cavity type sacrifice layer etching release window resonance simulation
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  • 1高兴军,赵恒华.大型通用有限元分析软件ANSYS简介[J].辽宁石油化工大学学报,2004,24(3):94-98. 被引量:50
  • 2唐孝明,唐高弟,张海.薄膜体声波谐振器技术[J].微纳电子技术,2005,42(8):380-383. 被引量:2
  • 3吴碧艳.电极形状对FBAR横模特性的影响[J].传感技术学报,2006,19(05B):1924-1926. 被引量:2
  • 4蒋松涛,吴孟强,吴勇,张树人.薄膜体声波滤波器的材料、设计及应用[J].材料导报,2006,20(11):21-24. 被引量:5
  • 5谢和平,张树人,杨成韬,张洪伟,叶井红.薄膜体声波谐振器的研究进展[J].材料导报,2006,20(F11):330-332. 被引量:5
  • 6[1]Mastrangelo C H,Hsu C H.Mechanical stability and adhesion of microstructures under capillary forces-PartⅠ:Basic Theory[J].Journal of Microelectromechanical Systems,1993,2(1):33-43.
  • 7[2]Mastrangelo C H,Hsu C H.Mechanical stability and adhesion of microstructures under capillary forces-partⅡ:Experiment[J].Journal of Microelectromechanical Systems,1993,2(1):44-55.
  • 8[3]Kim J Y,Kim Chang-Jin.Comparative study of various release methods for polysilicon surface micromachining[J].IEEE,1997,26-30:442-447.
  • 9[4]Monk David J,David S Soane,Roger T Howe.Hydrofluoric acid etching of silicon dioxide sacrificial layers Ⅰ.Experimental Observation[J].J Electrochem Soc,1994,141(1):264-269.
  • 10[5]David J Monk,David S Soane,Roger T Howe.Hydrofluoric Acid Etching of silicon Dioxide Sacrificial LayersⅡ.Modeling[J].J Electrochem Soc,1994,141(1):270-274.

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  • 1LAKIN K M. A review of thin-film resonator technology [J]. IEEE Microwave Magazine, 2003, 4 (4) : 61 - 67.
  • 2ROSENBAUM J F. Bulk acoustic wave theory and devices [M]. Boston: Artech House Press, 1988.
  • 3LAKIN K M, McCARRON K T, ROSE R E. Solidly moun- ted resonators and filters [C] // Proceedings of Ultrasonics Symposium. Seattle, WA, USA, 1995, 2: 905-908.
  • 4LAKIN K M, KLINE G R, MeCARRON K T. High-Q mi- crowave acoustic resonators and filters [J]- IEEE Transac- tions on Microwave Theory and Techniques, 1993, 41 (12): 2139- 2146.
  • 5POZAR D M. Microwave engineering [M]. New York: John Wiley Sons, 2009.
  • 6EBENEZER D D, ABRAHAM P. Piezoelectric thin shell theoretical model and eigenfunetion analysis of radially pola- rized ceramic cylinders [J]. The Journal of the Acoustical Society of America, 1999, 105 (1) .. 154 - 163.
  • 7汤亮,郝震宏,乔东海.2.4GHz射频薄膜体声波谐振器的研制[J].功能材料与器件学报,2009,15(1):27-33. 被引量:5
  • 8王胜福,许悦,郑升灵,韩东.1.8GHz AlN薄膜体声波谐振器的研制[J].半导体技术,2012,37(2):146-149. 被引量:5
  • 9高杨,周斌,何移,何婉婧.具有二氧化硅温度补偿层的薄膜体声波谐振器的建模与分析(英文)[J].强激光与粒子束,2015,27(1):169-174. 被引量:3

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