InSb纳米结构材料与器件进展与展望

Progress and prospect of the nano structure material and device

锑化铟（indium antimonide,熔点～525℃）是一种窄禁带半导体。由于其高的电子迁移率、小的有效质量及在极性III-V族材料中有最大的g因子,因而在高速器件、磁阻器件等方面具有潜在的电子学应用价值,而且已被广泛用于磁敏器件、红外探测器等。由于具有较大的波尔半径（60 nm）,使得InSb纳米结构成为具有吸引力的进行量子效应研究的半导体。因为这些特性,已有一些关于InSb纳米结构生长的报道。本文描述了近期InSb纳米结构生长的情况。透射电子显微镜等形貌像显示纳米结构为纳米晶体或纳米线,器件制备和性能测试显示其下一步的应用能力。

Indium antimonide（ InSb）（ melting point ～ 525 ℃） is a narrow bandgap semiconductor,and it is well known for its highest bulk electron mobility,smallest effective mass,and largest g factor among binary III- V materials. It therefore has potential electronic applications in high- speed devices and magnetoresistors,and has been used previously as magnetic sensors and infrared（ IR） detectors. It also has a large Bohr exciton radius of 60 nm,consequently making InSb nanostructure an attractive semiconductor for quantum effect studies. For its interesting properties,some work has been reported on the growth of InSb nanostructure. The recent growth of InSb nanostructure is described in this review. Transmission electron microscopy showed the nanostructure to be nanocrystal or nanowires. Device fabrication and characteristics show the application capability of next step.