摘要
Systematic investigations are performed on a set of AlxGa1-xN/GaN heterostructures grown by metalorganie chemical vapor deposition on sapphire （0001）. The Al composition x is determined by Rutherford backseattering. By using high resolution x-ray diffraction and the channeling scan around an off-normal （1213） axis in {1010} plane of the AlGaN layer, the tetragonal distortion eT csused by the elastic strain in the epilayer is determined. The results show that eT in the high-quality AlGaN layers is dramatically influenced by the Al content.
Systematic investigations are performed on a set of AlxGa1-xN/GaN heterostructures grown by metalorganie chemical vapor deposition on sapphire （0001）. The Al composition x is determined by Rutherford backseattering. By using high resolution x-ray diffraction and the channeling scan around an off-normal （1213） axis in {1010} plane of the AlGaN layer, the tetragonal distortion eT csused by the elastic strain in the epilayer is determined. The results show that eT in the high-quality AlGaN layers is dramatically influenced by the Al content.
基金
Supported by the National Natural Science Foundation of China under Grant No 91226202.
