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Enhanced Current Carrying Capability of Au-ZnSe Nanowire-Au Nanostructure via High Energy Electron Irradiation

Enhanced Current Carrying Capability of Au-ZnSe Nanowire-Au Nanostructure via High Energy Electron Irradiation
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摘要 To enhance the performance of nanoelectronics based on Au-ZnSe nanowire (NW)-Au (M-S-M) nanostructure, the effect of irradiation of the high energy electron beam emitted from the electron gun of a transmission electron microscope operated at 200kV on the current carrying capability of M-S-M nanostructure is investigated in sftu. Focusing the high energy electron beam on a Au electrode, the current carrying capability of the M-S-M nanostructure can be enhanced significantly with respect to the case of the electron beam being switched off. In this case, the electrons in the electrode are excited by the incident high energy electron and can freely tunnel through the Schottky barriers at the metal-semiconductor NW (M-S) nanocontacts, which can effectively reduce Joule heat dissipation and remarkably improve the current carrying capability of M-S-M nanostructure due to the fact that the current carrying capability highly depends on the Joule heating effect of Schottky barriers at M-S nanocontacts. To enhance the performance of nanoelectronics based on Au-ZnSe nanowire (NW)-Au (M-S-M) nanostructure, the effect of irradiation of the high energy electron beam emitted from the electron gun of a transmission electron microscope operated at 200kV on the current carrying capability of M-S-M nanostructure is investigated in sftu. Focusing the high energy electron beam on a Au electrode, the current carrying capability of the M-S-M nanostructure can be enhanced significantly with respect to the case of the electron beam being switched off. In this case, the electrons in the electrode are excited by the incident high energy electron and can freely tunnel through the Schottky barriers at the metal-semiconductor NW (M-S) nanocontacts, which can effectively reduce Joule heat dissipation and remarkably improve the current carrying capability of M-S-M nanostructure due to the fact that the current carrying capability highly depends on the Joule heating effect of Schottky barriers at M-S nanocontacts.
作者 谭玉 王岩国
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2014年第10期125-129,共5页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 11273465, and the Natural Science Foundation of Hunan Province under Grant No 14JJ4038.
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