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Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by AluOa Proton Conducting Films on Paper Substrates 被引量:1

Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by AluOa Proton Conducting Films on Paper Substrates
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摘要 Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of -1.25 × 10^-4 S/cm and a huge electric-double-layer (EDL) capacitance of -4.8μF/cm^2 at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zincoxide (IZO) thin-film transistors (TFTs) with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility (〉18cm2/V.s), a small .subthreshold swing (〈130mV/decade) and a high current on/off ratio (〉 106). Our results demonstrate that such junetionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics. Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of -1.25 × 10^-4 S/cm and a huge electric-double-layer (EDL) capacitance of -4.8μF/cm^2 at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zincoxide (IZO) thin-film transistors (TFTs) with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility (〉18cm2/V.s), a small .subthreshold swing (〈130mV/decade) and a high current on/off ratio (〉 106). Our results demonstrate that such junetionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2014年第10期157-160,共4页 中国物理快报(英文版)
基金 Supported by the Supported by China Postdoctoral Science Foundation of China under Grant No 2014M551557.
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