IGBT栅极阈值电压分析与实用意义的关系

The relationship of analysis of IGBT＇s gate voltage threshold and practical significance

分析了IGBT不同生产年代的阈值电压、不同规格IGBT的阈值电压对应的集电极电流以及相同规格不同制造商IGBT阈值电压的离散性和集电极电流的差异。通过对上述参数的分析表明，IGBT需要离散性小的阈值电压、需要阈值电压下的低集电极电流，阈值电压离散性小、对应的集电极电流低的IGBT更具应用价值。

The IGBT＇s Voltage threshold various in the case of different production is analyzed in this paper, as well as the different specification to the IGBT＇s corresponding collector current, furthermore, the IGBT＇s voltage threshold and collector current is discrete in condition of the same specification but different manufacturers. Based on the analysis above, show the following parameter which IGBT needs, low discreteness of voltage threshold, and low collector current at voltage threshold. Consequently, IGBT＇s with the lower voltage threshold discreteness and corresponding collector current makes it more reliable.