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多频段功率可控的CMOS开关类功率放大器设计 被引量:1

Design of multi-band CMOS switching power amplifier with power control
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摘要 开关类功率放大器相对于传统的线性功率放大器有更高的效率,其中E类开关功率放大器由于其高效、易于实现等特点被广泛运用,但在低频率时E类功率放大器难以达到足够的输出功率和效率。设计实现的多频段开关功率放大器在高频段(433 MHz)采用E类匹配方式,在较低的频段(315 MHz、230 MHz)采用新颖的方波匹配。在Cadence软件平台下进行仿真及版图绘制,结果显示该多频段开关功率放大器各频段都实现了20 dBm的输出功率,漏极效率均达到40%,同时,通过控制晶体管尺寸,可以对输出功率进行数字控制。 Switching power amplifier has higher efficiency than the traditional linear power amplifier. Class-E power amplifier is widely used because of its relatively higher efficiency and easier implementation, but it cannot achieve adequate output power and efficiency at low frequency. Class-E type matching is utilized at higher band(433 MHz)while the amplifier is matched in a novel square wave way at lower(315 MHz, 230 MHz)band. The simulation and layout are based on Cadence software, the designed amplifier can achieve 20 dBm output power with 40% drain efficiency over the entire bands using the same on-chip circuits. At the same time, the output power can be digitally controlled by changing the width of the output transistor.
出处 《计算机工程与应用》 CSCD 2014年第19期42-46,共5页 Computer Engineering and Applications
基金 湖南省自然科学基金重点项目(No.11JJ2034)
关键词 多频段 功率可控 金属氧化为半导体 开关类 功率放大器 multi-band power control CMOS switched power amplifier
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