原子层沉积制备铱薄膜的特性研究

Properties of Iridium Thin Films Fabricated by Atomic Layer Deposition

以乙酰丙酮铱[Ir(acac)3]和高纯氧为前驱体,采用原子层沉积(ALD)方法在基板温度为340℃的石英玻璃和硅基板上制备了金属铱薄膜。采用反射光谱测试仪、X射线电子能谱(XPS)、X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)等手段对不同厚度薄膜的微结构、表面形貌和光学性能进行了研究。结果表明,原子层沉积制备的Ir薄膜中元素纯度较高(大于95%),表面粗糙度低,并呈现多晶纳米颗粒。同时,Ir薄膜在紫外波段表现出较好的光学特性,可以用于制作Ir金属紫外光栅等光学器件。

Ir（acac）3 and O2 are used as chemical precursors to deposit iridium thin films on Si and quartz substrates by atomic layer deposition（ALD） at the temperature of 340 ℃. Characteristics of the films such as optical properties, microstructure and surface morphological image are investigated by reflectance spectrometer, X-ray diffraction （XRD）, X-ray photoelectron spectroscopy（XPS）, scanning electron microscope（SEM） and atomic force microscopy （AFM）. The results show that the films have polycrystalline morphology of nanoparticles and smooth surfaces, low impurity content. The thin films exhibits good optical properties in the ultraviolet spectral region, and it can be well used for Ir grating and other optical devices.