期刊文献+

面向晶体管级广义门电路的PTM可靠性计算 被引量:1

Transistor-level oriented calculation of reliability for generalized gates based on PTM
原文传递
导出
摘要 不精确的广义门电路可靠性映射到门级或高层应用时误差容易因规模效应等而被过度放大导致结果不可靠.本文选择了在门级电路可靠性精确评估中得到有效验证的PTM模型用以精确计算晶体管级广义门电路的结构可靠性;分析了晶体管级广义门电路结构的逻辑抽象并转换成了功能一致的门级电路结构的逻辑抽象形式;提取了电路各组成单元的故障点及主要故障模式,并构建了与之相对应的面向故障的概率转移矩阵;依据各组成单元间的串并联特点,在有考虑输入信号故障的情况下,通过门级PTM方法的运算法则计算得到了晶体管级广义门电路的结构可靠性.在典型的CMOS广义门电路上的实验结果验证了本文所提方法的有效性,还分析了广义门电路的可靠性与其各主要类型故障之间的关系,并获得了一些有意义的结果. When the imprecise reliability of generalized gates is applied to the gate-level or high-level circuits, the errors could be easily over-enlarged for the scale effect and other reasons, which leads to unreliable results. In this paper, the PTM model, which the effectiveness was proved by accurate gate-level circuit reliability estimation, was chosen to accurately calculate the structure reliability of generalized gates at the transistor-level; the structure logistic abstract of transistor-level generalized gates is analyzed and transformed into the style of gate-level structure logistic abstract having the same function with the pre-transform one; the failure points of circuit components and the main fault modes are extra,ted, and the corresponding probabilistic transfer matrixes oriented to faults are constructed; according to the characteristics of series-parallel circuit components, the structure reliabilities of transistor-level generalized gates are calculated by the gate-level PTM method under the fault conditions on input signals. Simulation results for typical generalized gates demonstrate the effectiveness of the proposed method; furthermore, the relation between generalized gates reliability and these main types faults is analyzed, and some interesting results are got.
出处 《中国科学:信息科学》 CSCD 2014年第10期1226-1238,共13页 Scientia Sinica(Informationis)
基金 国家自然科学基金(批准号:61363002 60903033 61432017)资助项目
关键词 晶体管级电路 可靠性 PTM模型 CMOS器件 故障模式 transistor-level circuit, reliability, PTM model, CMOS devices, fault modes
  • 相关文献

参考文献20

  • 1Stanisavljevic M, Schmid A, Leblebici Y. Reliability of Nanoelectronic VLSI. New Jersey: John Wiley & Sons, Inc., 2012. 463-481.
  • 2Yu C C. Probabilistic analysis for modeling and simulating digital circuits. Dissertation for Ph.D. Degree. Michigan: The University of Michigan, 2012.
  • 3Lingasubramanian K. Probabilistic error analysis models for nano-domain VLSI circuits. Dissertation for Ph.D. Degree. Tampa: University of South Florida, 2010.
  • 4Xiao J, Jiang J H, Zhu X G, et al. A method of gate-level circuit reliability estimation based on iterative PTM model. In: Proceedings of the IEEE 17th Pacific Rim International Symposium on Dependable Computing, Pasadena, 2011. 276-277.
  • 5肖杰,江建慧,杨旭华,梁家荣.一个面向缺陷分析的电路成品率与可靠性的关系模型[J].电子学报,2014,42(4):747-755. 被引量:5
  • 6肖杰,江建慧.面向缺陷分析的广义门电路故障概率的计算[J].计算机辅助设计与图形学学报,2013,25(4):564-572. 被引量:3
  • 7Ibrahim W, Beiu V, Beg A. GREDA: a fast and more cccurate gate reliability EDA tool. IEEE Trans Comput Aid Des, 2012, 31: 509-521.
  • 8Krishnaswamy S, Viamontes G F, Markov I L, et al. Accurate reliability evaluation and enhancement via probabilistic transfer matrices. In: Proceedings of the Conference on Design Automation and Test in Europe, Munich, 2005. 282-287.
  • 9Nikolic K, Sadek A, Forshaw M. Architectures for reliable computing with unreliable nanodevices. In: Proceedings of the 1st IEEE Conference on Nanotechnology, Maui, 2001. 254-259.
  • 10El-Maleh A H, Al-Hashimi B M, Melouki A, et al. Defect-tolerant N2-transistor structure for reliable nanoelectronic designs. IET Comput Digit Tec, 2009, 3: 570-580.

二级参考文献95

  • 1赵天绪,段旭朝,郝跃.基于制造成品率模型的集成电路早期可靠性估计[J].电子学报,2005,33(11):1965-1968. 被引量:6
  • 2赵天绪,段旭朝,郝跃.集成电路互连线寿命的工艺缺陷影响分析[J].计算机学报,2006,29(2):227-232. 被引量:7
  • 3郝跃,朱春翔.硅片缺陷粒径分布的分形特征及动力学模型[J].电子学报,1997,25(2):73-75. 被引量:1
  • 4Kim J S,Nicopoulos C,Vijakrishnan N,et al.A probabilistic model for soft-error rate estimation in combinational logic[A].Proc of the 1 st Int.Workshop on Probabilistic Analysis Techniques for Real Time and Embedded Systems,Pisa[C].Amsterdam:Elsevier,2004.25-31.
  • 5Asadi G,Tahoori M B.An analytical approach for soft error rate estimation in digital circuits[A].Proc IEEE Int Symp on Circuits and Systems,Kobe[C].Washington:IEEE Computer Society,2005.2991-2994.
  • 6Krishnaswamy S,Viamontes G F,Markov I L,et al.Accurate reliability evaluation and enhancement via probabilistic transfer matrices[A].Proc of IEEE/ACM Conf Design,Automation and Test in Europe,Munich[C].Washington:IEEE Computer Society,2005.282-287.
  • 7Hess C,Strole A.Modeling of real defect outlines for defect size distribution and yield prediction[A].Proc IEEE Int Conf on Microelectronic Test Souctures,Barcelona[C].Karlsruhe:Oxford University Press,1993.75-81.
  • 8Ferris-Prabhu A V.Defect size variations and their effect on the critical area of VLSI devices[J].IEEE Journal of Solid-state Circuits,1985,20(4):878-880.
  • 9Alexander R D,Paul D F,Michael J L.A layout-driven yield predictor and fault generator for VLSI[J].IEEE Transactions on Semiconductor Manufacturing,1993,6(1):77-82.
  • 10王真 江建慧.考虑版图级因素的PTM中故障感染率的计算.哈尔滨工业大学学报,2009,41:124-129.

共引文献22

同被引文献6

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部