摘要
A GalnP/AlGaAs broadband tunnel junction （TJ） with a peak current density of 65.3 A/cm2 and an AlGalnP/AlGaAs ultrabroad band TJ with a peak current density of 6.1 A/cm2 were studied and fabricated. Di- ethyltellurium （DETe） was chosen as an n-type dopant in the TJ. The growth temperature, valve switching and flow variation parameters of DETe were studied for better performance. Measurements, including predoping of DETe before growth and heating up reactor temperature after growth, were taken to deal with the effect of turn-on and off of tellurium. The strain balance method was used to the manage lattice mismatch that was introduced by the tellurium. Various flows of DETe were studied to get the appropriate value needed to fabricate a high peak current density tunnel junction.
A GalnP/AlGaAs broadband tunnel junction （TJ） with a peak current density of 65.3 A/cm2 and an AlGalnP/AlGaAs ultrabroad band TJ with a peak current density of 6.1 A/cm2 were studied and fabricated. Di- ethyltellurium （DETe） was chosen as an n-type dopant in the TJ. The growth temperature, valve switching and flow variation parameters of DETe were studied for better performance. Measurements, including predoping of DETe before growth and heating up reactor temperature after growth, were taken to deal with the effect of turn-on and off of tellurium. The strain balance method was used to the manage lattice mismatch that was introduced by the tellurium. Various flows of DETe were studied to get the appropriate value needed to fabricate a high peak current density tunnel junction.
