利用霍尔效应研究热退火对黑硅材料电学性质的影响

Electrical property of annealed black silicon measured by Hall effect

利用霍尔效应测量了不同温度热退火后的黑硅的霍尔系数、载流子浓度、载流子迁移率和电导率.随着热退火温度的升高,黑硅内载流子的浓度缓慢下降,载流子迁移率却同步增加,这说明黑硅内载流子散射的主要形式是电离杂质散射.

The Hall coefficient ,carrier concentration ,carrier mobility and conductivity of an-nealed black silicon were measured by Hall effect .With rising annealing temperature ,the carrier con-centration decreased slowly ,and the carrier mobility raised at the same time .Thus the main scattering process in black silicon was caused by ionized impurity .