离子束刻蚀碲镉汞中转型宽度

Conductivity type conversion in ion-beam-milled HgCdTe

用Ar+离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔,利用激光诱导电流方法测试转型后的n区宽度.研究发现,在相同的刻蚀条件下,n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时,n区宽度随汞空位浓度的增加呈线性减小;当汞空位浓度一定时,n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.

After different loopholes are produced by Ar＋ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if vol- ume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.