基于改进忆阻器的混沌电路研究

Study on the Improved Memristor Based Chaotic Circuit

忆阻器是一种具有记忆和连续输出特点的非线性电阻器，针对窗函数忆阻器模型的不足，提出了一种改进的窗函数，它通过添加一个参数来关联忆阻器的线性与非线性特性。为了对该窗函数进行验证，运用了数值分析与模拟电路分析的方法，仿真得出了忆阻器的伏安特性曲线，结果表明，使用改进窗函数的忆阻器模型更加接近实际物理状态。同时，为了进一步研究该模型的电路特性，将该模型应用于蔡氏混沌电路，通过MATLAB仿真得出其相图，并分析它的李雅普诺夫指数谱，数据表明该电路能产生混沌现象，因此，该忆阻器模型是一个能被应用的非线性模型。

Memristor is a nonlinear resistor with memory and continuous output characteristics. In this paper, an improved window function of the memristor is proposed, which add a parameter to correlate the linear and nonlinear characteristics of memristors. In order to validate the window function, the volt-ampere characteristic curve is simulated by using the analysis method of numerical analysis and circuit simulation. Results show that, the memristor model improvement of window function is closer to the actual physical state. At the same time, in order to further study on characteristics of the circuit model, the model is applied to Chua＇ s chaotic circuit, the phase diagram was obtained by MATLAB simulation, and its Lyapunov exponent spectrum was analyzed. Data show that the circuit can generate chaotic phenomenon, therefore the memristor model is a nonlinear model can be applied.