摘要
We show a simple, convenient, and cost-effective scheme for tunable frequency upconversion at millimeterwave band without a local oscillator. By launching a 2.5-Gb/s directly modulated baseband signal into a Fabry-Perot laser diode （FP-LD）, the mode of the FP-LD is locked by the high-order sideband of the injected signal. The beating frequency of the injection-locked mode and the injected signal can generate upconversion subcarriers. In our experiment, tunable frequency subcarriers of 28.4, 29.3, and 30.5 GHz are obtained without any radio-frequency local oscillator. The single sideband phase noises of -83.88, -76.36, and -78.54 dBc/Hz @ 10 kHz （at 28.4-, 29.3-, and 30.5-GHz subcarriers, respectively） are shown. The proposed scheme has potential to generate much higher frequency carriers.
We show a simple, convenient, and cost-effective scheme for tunable frequency upconversion at millimeterwave band without a local oscillator. By launching a 2.5-Gb/s directly modulated baseband signal into a Fabry-Perot laser diode （FP-LD）, the mode of the FP-LD is locked by the high-order sideband of the injected signal. The beating frequency of the injection-locked mode and the injected signal can generate upconversion subcarriers. In our experiment, tunable frequency subcarriers of 28.4, 29.3, and 30.5 GHz are obtained without any radio-frequency local oscillator. The single sideband phase noises of -83.88, -76.36, and -78.54 dBc/Hz @ 10 kHz （at 28.4-, 29.3-, and 30.5-GHz subcarriers, respectively） are shown. The proposed scheme has potential to generate much higher frequency carriers.
基金
supported in part by the National Basic Research Program of China(No.2012CB315704)
the Specialized Research Fund for the Doctoral Program of Higher Education(NO.20120032130010)
