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IGBT模型参数提取方法研究

The Parameter Abstract Method of IGBT Model
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摘要 基于绝缘栅双极性晶体管简化等效电路,对影响IGBT输出外部信号的四个相关内部参数:栅极电容、跨导、剩余截流子寿命、栅漏极有效导电面积,进行了讨论并提出了推导方法. Based on the simplified model of IGBT,the inner parameters of insulated gate bipolar transistor（IGBT）which influence the output signals,such as grid capacitance,transconductance,lifetime of remain carrier,andeffective conductive area of gate and drain,were discussed and deduced.
作者 张伟 王孟平
机构地区 河南省科学院应用物理研究所有限公司
出处 《河南科学》 2014年第10期2021-2024,共4页 Henan Science
基金 2012年河南省科技创新人才计划项目(124200510022)
关键词 绝缘栅双极性晶体管 栅极电容 跨导 剩余截流子寿命 栅漏极有效导电面积 Insulated gate bipolar transistor grid capacitance transconductance lifetime of remain carrier effective conductive area of gate and drain
分类号 TN710.2 [电子电信—电路与系统]
  • 相关文献

参考文献5

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  • 3唐勇,胡安,陈明.IGBT栅极特性与参数提取[J].电工技术学报,2009,24(7):76-80. 被引量：32
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二级参考文献12

  • 1Ruthing H, Umbach F, Hellmund O, et al. 600V- IGBT3: trench field stop technology in 70pm ultra thin wafer technology[C]. ISPSD, Cambridge, UK, 2003: 63-66.
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共引文献45

河南科学
2014年 第10期

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