局域耦合效应在GaInP太阳电池中的应用

Application of the Localized Coupling Effect in the GaInP Solar Cell

近年来,局域耦合效应在光电转换器件中的应用受到广泛关注,在发光二极管以及硅基太阳电池中的基础与应用研究成为本领域的研究热点。然而局域耦合效应在宽禁带材料体系太阳电池中的应用仍未见系统报道。研究中利用溅射与热退火的手段在GaInP太阳电池表面成功制备了粒径与占空比可控的Au/半导体纳米异质结构,并对其退火前后的形貌进行了系统分析,后续对纳米异质结构的光学吸收现象及局域耦合效应的内在机制进行了探讨。最终,通过反射光谱的表征,在Au溅射时间为20 s和30 s样品中分别得到了2.2%和5.5%的光吸收增强。该研究提出的局域耦合效应在GaInP太阳电池中的应用,为改善GaInP太阳电池的表面吸收效率提供了一种新的思路。

In recent years, the applications of localized coupling effect in photoelectric conversion devices have attracted widely attention. Although related basic and applied research in light emitting diodes and silicon based solar cells become a hot research topic, localized coupling effects in wide band- gap solar cells are not reported systematically. The controllable Au/semiconductor nano heterostructures with different particle sizes and duty ratios were successfully fabricated on the GalnP solar cell surface using sputtering and annealing approaches. Morphologies and absorption properties before and after the annealing process were analyzed by the scanning electron microscope （SEM） and UV-VIS spectrometer respectively. Then the optical absorption mechanism of different samples was discussed. Finally, 2.2% and 5.5% enhancement in light absorption had been obtained in the samples with the sputtering time of 20 s and 30 s via reflectance spectrum measurement. It provides a new direction to improve the absorp- tion efficiency of GalnP solar cells.