CIGS薄膜太阳能电池结构分析

Device structure analysis of CIGS thin film solar cell

阐述了影响铜铟镓硒(CIGS)薄膜太阳能电池性能和效率的技术因素,包括CIGS半导体材料的晶体结构、电池的结构组成、衬底材料的选择以及CIGS薄膜的Na掺杂等。分析了多元共蒸发法、硒化法沉积CIGS吸收层以及化学水浴法沉积Cd S缓冲层的具体工艺和特征,介绍了柔性CIGS薄膜太阳能电池的卷对卷技术,最后就CIGS薄膜太阳能电池的研发与商业化生产中遇到的挑战及解决方法进行了分析与归纳。

The technological factors which strongly influence the properties and efficiency of copper indium gallium diselenide（CIGS） thin film solar cell are reviewed, such as the crystal structure of CIGS semiconductor material, the device structure of CIGS thin film solar cell, the choice of substrate material and the Na-doping of CIGS thin film. And the deposition processes and features of co-evaporation, selenization for growth of CIGS absorption layer and chemical bath deposition for growth of Cd S buffer layer are analyzed. In addition, the roll-to-roll production of the flexible CIGS thin film solar cell is introduced. At last, the challenges in the development and commercial production of CIGS thin film solar cell and the corresponding solutions are analyzed and summarized.