期刊文献+

一种P掺杂ZnO纳米梳的制备及其光致发光性能研究 被引量:2

Fabrication and photoluminescence of P-doped ZnO nanocombs
下载PDF
导出
摘要 采用化学气相沉积(CVD)方法制备了P掺杂ZnO纳米梳,扫描电子显微镜(SEM)结果显示,纳米梳状产物均匀分布在Si衬底上。P掺杂ZnO纳米梳为高度结晶的六方纤锌矿结构,ZnO中P的掺杂含量约为2%(原子分数)。室温光致发光(PL)光谱表明,P掺杂ZnO纳米梳在样品不同区域的发光性能略有不同,但是均出现3个发光峰:紫外、绿光和近红外发光峰。同时PL结果也表明样品的整体结晶质量比较好。 P-doped ZnO nanocombs were successfully synthesized via a simple chemical vapor deposition (CVD) method.SEM results indicate that the production composes of nanocombs.P doping concentration was about 2 at%.X-ray diffraction (XRD)spectrum of the P-doped ZnO nanocombs reflects the wurtzite structure,and no any impurity phase was detected.In addition,the photoluminescence spectra of the P-doped ZnO nanocomb were also investigated.There were three emission peaks,ultraviolet emission,green emission and near-infrared emission.The high intensity of ultraviolet and near-infrared emission peaks reveals that the crystal quality of the nanocombs was high.
出处 《功能材料》 EI CAS CSCD 北大核心 2014年第21期21011-21013,共3页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50502005 11175014) 新世纪优秀人才计划资助项目(NCET-07-0065)
关键词 P掺杂ZnO 纳米梳 化学气相沉积 光致发光 P-doped ZnO nanocomb chemical vapor deposition photoluminescence
  • 相关文献

参考文献18

  • 1ZhaoC X,LiY F,Chen Y C,etal.MicrostructurechangeofZnOnanowireinducedbyenergeticXGrayradiGationanditseffectonthefieldemissionproperties[J].Nanotechnology,2013,24(27):275703.
  • 2Ibrahem M A,WeiH,TsaiM,etal.SolutionGprocessedzincoxidenanoparticlesasinterlayermaterialsforinvertGedorganicsolarcells[J].SolarEnergyMaterialsandSoGlarCells,2013,108:156-163.
  • 3DongH X,LiuY,LuJ,etal.SingleGcrystallinetowerGlikeZnO microrodUVlasers [J].JournalofMaterialsChemistryC,2013,1(2):202-G206.
  • 4ZhaoBaoyuan,WangHaibo,ZhuoNingze,etal.SynthesisandluminescencepropertiesofCaLa2-xZnO5∶Eux withnearGUVexcitation[J].JournalofFunctionalMaterials,2013,45(5):02001-02003.
  • 5Azam A,AhmedF,HabibSS,etal.FabricationofCoGdopedZnO nanorodsforspintronicdevices [J].MetalsandMaterialsInternational,2013,19(4):845-850.
  • 6PeartonSJ,RenF.AdvancesinZnOGbasedmaterialsforlightemittingdiodes [J].CurrentOpinioninChemicalEngineering,2014,(3):51-55.
  • 7CaoGuanlong,PanGuofeng,HePing,etal.Preparationandgassensing propertystudiesofCeO2GdopdeZnOthickfilm[J].JournalofFunctionalMaterials,2013,44(5):682-688.
  • 8XieSF,LiuY Y,ChenZL,etal.SuperiorphotocataGlyticpropertiesofphosphorousGdoped ZnO nanocombs[J].RscAdvances,2013,48(3):26080-26085.
  • 9XiuF X,YangZ.pGtypeZnOfilm withsolidGsourcephosphorusdopingbymolecularGbeamepitaxy [J].ApGpliedPhysicsLetters,2006,88:052106-1-052106-3.
  • 10Kim KK,Kim HS,HwangDK,etal.RealizationofpGtypeZnOthinfilmsviaphosphorusdopingandtherGmalactivationofthedopant[J].AppliedPhysicsLetGters,2003,83(1):63-65.

同被引文献16

引证文献2

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部