摘要
提出一种宽带(250MHz^4.7GHz)无电感BiCMOS射频前端结构,包含低噪声跨导放大器(LNTA)、带电阻无源混频器和跨阻级。低噪声跨导放大器使用了噪声和线性度消除技术,例如输入交叉耦合结构、互补输入和电流复用技术。带电阻无源混频器采用退化电阻来提高线性度。仿真结果表明,当电源电压为3.3V时,总电流为9.38mA,噪声系数为9.8dB(SSB),电压转换增益为20dB,输入3阶交调为+11.8dBm。
A broadband (250 MHz^4.7 GHz) inductorless BiCMOS front-end with a low noise transconductance amplifier (LNTA), a resistively degenerated passive mixer and a transimpedance stage were presented. The LNTA utilized noise and distortion cancellation, such as input cross-coupling and current reuse complementary input. A resistively degenerated passive mixer was used to improve the linearity (IIP2 and IIP3). The simulated results showed 9.8 dB single-sideband (SSB) NF, 20 dB voltage conversion gain, + 11.8 dBm IIP3, while consuming 9.38 mA from 3.3 V supply.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第5期661-665,共5页
Microelectronics
基金
华东师大科技创业基金会(78210082)