一种低开销的抗SEU锁存器

A Low Overhead SEU Tolerant Latch

随着微电子技术的不断进步,集成电路工艺尺寸不断缩小,工作电压不断降低,节点的临界电荷越来越小,空间辐射引起的单粒子效应逐渐成为影响芯片可靠性的重要因素之一。针对辐射环境中高能粒子对锁存器的影响,提出了一种低开销的抗SEU锁存器(LOHL)。该结构基于C单元的双模冗余,实现对单粒子翻转的防护,从而降低软错误发生的概率。Spice模拟结果显示,与其他相关文献中加固锁存器相比,LOHL在电路面积、延迟和延迟-功耗积上有优势。

With the development of microelectronic technology, the IC process feature size has been scaling and power supply voltage decreasing, which leads to the amount of charge stored on a circuit node becomes much smaller. The single event effects （SEE） caused by radiation become one of the important factors which car~ affect the reliability of chip. A low overhead hardened latch design was proposed to mitigating latch single event upsets （SEU） in the radiation environment. The proposed latch can reduce the probability of soft errors, because it is a heterogeneous dual modular redundancy （DMR） structure based on C-element and provides protection to single event upset. Compared with other hardened latches, the simulation results of SPICE showed that LOHL was superior to the others on the area, delay and power-delay tradeoff.