一种应用于数字电视中的CMOS宽带高线性LNA设计

Design of a CMOS Wideband Highly Linear Low-noise Amplifier for Digital TV Applications

基于TSMC 0.13μm CMOS工艺设计了一款应用于数字电视中的CMOS宽带高线性低噪声放大器。该电路采用传统宽带低噪声放大器的改进结构。为了提高LNA的线性度,采用伏尔特拉级数分析了电路的非线性分量,并修正了传统的噪声抵消电路用于抵消整个电路的非线性分量。基于TSMC 0.13μm CMOS工艺对其进行了设计,仿真结果表明：此LNA在50-860 MHz频带内,增益为12.7-13.3 dB,噪声系数最小仅为1.2 dB,在1.2 V的电源电压下,工作电流为12.2 mA,并且其输入三阶交调点为9.7~14.2 dBm,取得了较高的线性度。

This paper presents a highly linear wideband differential low-noise amplifier （LNA） for digital TV applications. The proposed LNA is a modified version of the conventional wideband LNA. In order to increase the linearity of LNA, the Volterra series is adopted to identify the nonlinear components and the noise-cancelling circuit is modified to eliminate the whole nonlinear components. Designed in TSMC 0.13 μm CMOS technology, the wideband LNA has IIP3 of 9.7 - 14.2 dBm, gain of 12.7 -13.3 dB and a minimum noise figure of 1.2 dB, as determined from simulations, while drawing 12.2 mA from a 1.2 V supply.