0.18 μm SOI工艺抗辐照触发器性能研究

Research of Radiation-hardened Flip-flop in 0.18μm SOI Technology

随着集成电路制造工艺尺寸不断减小、集成度不断提高,集成电路在太空环境应用中更容易受到单粒子辐照效应的影响,可靠性问题越发严重。特别是对高频数字电路而言,单粒子翻转效应(SEU)及单粒子瞬态扰动(SET)会导致数据软错误。虽然以往的大尺寸SOI工艺,具有很好的抗单粒子性能,但仍需要对深亚微米SOI电路进行辐照效应研究。文中通过对4种触发器链进行抗辐照设计,用0.18μm SOI工艺进行了流片验证,并与体硅CMOS工艺对比分析。1.8V电源电压条件下的触发器翻转阈值可以达到41.7MeV·cm2/mg,抗辐射性能比0.18μm体硅CMOS工艺提升了约200%。

With the decrease of the line-width and the increase of the integration level in CMOS technology,the integrated circuit is more susceptible to the single event effect in the space,and its stability has become a serious concern.Especially for the design of high-frequency digital circuit,the single event upset（SEU）and single event transient（SET）effect could lead to soft-errors.Although the flip-flop in the large line-width SOI technology has a good anti-radiation performance,the radiation effect research of circuits in 0.18μm SOI technology is still necessary.Radiation experiments are conducted by studying the four kinds of flip-flop link in 0.18μm SOI technology,and the results are compared with the flip-flop link in 0.18μm Si technology.Test results show that：the LET（Line energy transfer）threshold of 1.8Vflip-flop in 0.18μm SOI technology is 41.7MeV·cm2/mg,and it is twice as large as that of flip-flop link in 0.18μm Si technology.In addition,this research lays a good foundation for the design of radiation hardened circuits in future.