H_2S气氛下硫化温度对Cu_2ZnSnS_4薄膜性能影响的研究

Effect of Sulfurization Temperature on Properties of Cu_2ZnSnS_4 Films in H_2S Atmosphere

用磁控溅射法在玻璃衬底上沉积Zn/Sn/Cu预置层,然后再在H2S气氛下将其硫化制成Cu2ZnSnS4(CZTS)薄膜。研究了不同硫化温度(460,500,540和580℃)对CZTS薄膜性能的影响。采用X射线衍射、Raman、扫描电镜、能量色散谱和紫外-可见-近红外分光光度计表征薄膜的物相、表面形貌和光学性能。结果表明,在不同硫化温度下都成功制备了CZTS薄膜。当硫化温度为540℃时,制备的薄膜晶粒达到2μm,结晶性最好,表面致密光滑,而且它的吸收系数大于7×104cm-1,禁带宽度为1.49 e V。硫化温度较低(460℃)时,含有Cu2-xS杂质相,表面存在孔洞。而硫化温度较高(580℃)时,晶界处会产生微裂纹。

The Zn/Sn/Cu precursor layers,deposited by magnetron sputtering on glass substrate,were sulfurized in H2S atmosphere. The influence of the sulfurization temperature （460- 580℃ ） on the properties of the CH2ZnSnS4（CZTS） films was investigated.The phase structures,microstructures,and optical properties of the films were characterized with X-ray diffraction, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, and ultraviolet visible near infrared spectrometer.The results show that the CZIS Fdms were synthesized at all sulfmhzation temperatures. The dense-smooth CZIS film sulfurized at an optimized teinperature of 540℃ had large grain （ - 2μm） ,and good crystallinity. Sulfurized at 540℃ ,the CZTS films had an absorption coefficient higher than 7×10^4 cm^-1 and a band gap of 1.49 eV.However,sulfurized at 460℃,the impurity phase of Cu2-xS was observed in the porous CZTS film.As the sulfufization temperature increased to 580℃ ,micro-cracks emerged at the grain boundaries.