Si(111)基片上Mg_2Si薄膜的脉冲激光沉积

Growth and Microstructures Characterization of Pulsed Laser Deposited Mg_2Si Thin Film on Si( 111) Substrate

采用脉冲激光沉积方法在Si(111)基片上制备了Mg2Si薄膜。研究了激光能量密度、退火气氛及压强、退火温度、退火时间等工艺条件对Mg2Si薄膜生长的影响。用X射线衍射仪分析了Mg2Si薄膜的物相,用原子力显微镜、高分辨场发射扫描电镜表征了薄膜的形貌。实验结果表明:在激光能量密度为2.36 J/cm2,Si(111)基片上室温、真空(真空度10-6Pa)条件下沉积,在Ar气压强为10 Pa,500℃,30 min条件下原位退火得到了纯相、结构均匀、表面平整、厚度约为900 nm的Mg2Si多晶薄膜。

The Mg2Si thin films were synthesized by pulsed laser deposition on Si（lll）substrate. The effects of the growth conditions, including but not limited to the laser energy density, annealing temperature and time and argon pressure, on the microstructures and phase of Mg2Si films were investigated. The Mg2Si films were characterized with X-ray diffraction,atomic force microscopy, field-emission scanning electron microscopy, and Raman spectroscopy. The results show that the power density of pulsed laser and annealing temperature and time all have a major impact on the growth of Mg2Si films. Synthesized for 5 h at room temperature and a laser energy density of 2.36 J/cm2, followed by annealing at 500~C for 30 min in 10 Pa Ar pressure, the single-phased, smooth, and compact MgaSi films, with uniformly distributed grains and a thickness of 900 nm, were obtained.