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Dynamic investigation of the finite dissolution of silicon particles in aluminum melt with a lower dissolution limit

Dynamic investigation of the finite dissolution of silicon particles in aluminum melt with a lower dissolution limit
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摘要 The finite dissolution model of silicon particles in the aluminum melt is built and calculated by the finite difference method, and the lower dissolution limit of silicon particles in the aluminum melt is proposed and verified by experiments, which could be the origin of microinhomogeneity in aluminum-silicon melts. When the effects of curvature and interface reaction on dissolution are not considered; the dissolution rate first decreases and later increases with time. When the effects of curvature and interface reaction on dissolution are considered, the dissolution rate first decreases and later increases when the interface reaction coefficient (k) is larger than 10 1, and the dissolution rate first decreases and later tends to be constant when k is smaller than 10-3. The dissolution is controlled by both diffusion and interface reaction when k is larger than 10-3, while the dissolution is controlled only by the interface reaction when k is smaller than 10-4. The finite dissolution model of silicon particles in the aluminum melt is built and calculated by the finite difference method, and the lower dissolution limit of silicon particles in the aluminum melt is proposed and verified by experiments, which could be the origin of microinhomogeneity in aluminum-silicon melts. When the effects of curvature and interface reaction on dissolution are not considered; the dissolution rate first decreases and later increases with time. When the effects of curvature and interface reaction on dissolution are considered, the dissolution rate first decreases and later increases when the interface reaction coefficient (k) is larger than 10 1, and the dissolution rate first decreases and later tends to be constant when k is smaller than 10-3. The dissolution is controlled by both diffusion and interface reaction when k is larger than 10-3, while the dissolution is controlled only by the interface reaction when k is smaller than 10-4.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期129-135,共7页 中国物理B(英文版)
基金 supported by the National Basic Research Program of China(Grant No.2013CB632203)
关键词 silicon particle aluminum melt lower dissolution limit finite dissolution model silicon particle, aluminum melt, lower dissolution limit, finite dissolution model
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